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Open AccessFeature PaperArticle

Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

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Electronic Engineering Department, Università di Roma Tor Vergata, 00131 Roma, Italy
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OMMIC SAS, 2 rue du Moulin, 94453 Limeil Brèvannes, France
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Thales Alenia Space, via Saccomuro 19-21, 00131 Rome, Italy
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European Commission—Research Executive Agency (REA), place Rogier 16, 1049 Bruxelles, Belgium
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Author to whom correspondence should be addressed.
Electronics 2020, 9(1), 150; https://doi.org/10.3390/electronics9010150
Received: 14 December 2019 / Revised: 2 January 2020 / Accepted: 10 January 2020 / Published: 13 January 2020
(This article belongs to the Section Microelectronics and Optoelectronics)
In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications. View Full-Text
Keywords: low-noise amplifier (LNA); gallium nitride (GaN); GaN/Si; GaN-on-Si; high linearity; HEMT; Ka-band low-noise amplifier (LNA); gallium nitride (GaN); GaN/Si; GaN-on-Si; high linearity; HEMT; Ka-band
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Pace, L.; Colangeli, S.; Ciccognani, W.; Longhi, P.E.; Limiti, E.; Leblanc, R.; Feudale, M.; Vitobello, F. Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models. Electronics 2020, 9, 150.

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