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Journal: Electronics, 2019
Volume: 8
Number: 885
885
Article: Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer
Authors: by Yan Gu, Dongmei Chang, Haiyan Sun, Jicong Zhao, Guofeng Yang, Zhicheng Dai and Yu Ding
Link: https://www.mdpi.com/2079-9292/8/8/885

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