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Fault Modeling of Graphene Nanoribbon FET Logic Circuits

Instituto ITACA, Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
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Electronics 2019, 8(8), 851; https://doi.org/10.3390/electronics8080851
Received: 5 July 2019 / Revised: 25 July 2019 / Accepted: 27 July 2019 / Published: 31 July 2019
(This article belongs to the Section Microelectronics)
Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. Understanding and controlling the fault mechanisms associated with new materials and structures for both transistors and interconnection is a key issue in novel nanodevices. The graphene nanoribbon field-effect transistor (GNR FET) has revealed itself as a promising technology to design emerging research logic circuits, because of its outstanding potential speed and power properties. This work presents a study of fault causes, mechanisms, and models at the device level, as well as their impact on logic circuits based on GNR FETs. From a literature review of fault causes and mechanisms, fault propagation was analyzed, and fault models were derived for device and logic circuit levels. This study may be helpful for the prevention of faults in the design process of graphene nanodevices. In addition, it can help in the design and evaluation of defect- and fault-tolerant nanoarchitectures based on graphene circuits. Results are compared with other emerging devices, such as carbon nanotube (CNT) FET and nanowire (NW) FET. View Full-Text
Keywords: emerging nanodevices; graphene nanoribbon FET; defects and variations; fault models; logic circuits emerging nanodevices; graphene nanoribbon FET; defects and variations; fault models; logic circuits
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MDPI and ACS Style

Gil-Tomàs, D.; Gracia-Morán, J.; Saiz-Adalid, L.J.; Gil-Vicente, P.J. Fault Modeling of Graphene Nanoribbon FET Logic Circuits. Electronics 2019, 8, 851. https://doi.org/10.3390/electronics8080851

AMA Style

Gil-Tomàs D, Gracia-Morán J, Saiz-Adalid LJ, Gil-Vicente PJ. Fault Modeling of Graphene Nanoribbon FET Logic Circuits. Electronics. 2019; 8(8):851. https://doi.org/10.3390/electronics8080851

Chicago/Turabian Style

Gil-Tomàs, D., J. Gracia-Morán, L.J. Saiz-Adalid, and P.J. Gil-Vicente. 2019. "Fault Modeling of Graphene Nanoribbon FET Logic Circuits" Electronics 8, no. 8: 851. https://doi.org/10.3390/electronics8080851

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