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Open AccessArticle

Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs

1
School of Information Science and Technology, Fudan University, Shanghai 200433, China
2
Aurorachip Co. Ltd., Zhejiang 314000, China
3
Center for High Reliability Power Semiconductor, Yangtze Delta Region Institute of Tsinghua University, Zhejiang 314000, China
4
School of Information Science Technology, East China Normal University, Shanghai 200241, China
5
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(6), 598; https://doi.org/10.3390/electronics8060598
Received: 16 March 2019 / Revised: 23 May 2019 / Accepted: 25 May 2019 / Published: 28 May 2019
(This article belongs to the Special Issue Radiation Tolerant Electronics)
Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiation-hardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices’ total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance. View Full-Text
Keywords: radiation-hardened; single event gate rupture (SEGR); SEB; power MOSFETs radiation-hardened; single event gate rupture (SEGR); SEB; power MOSFETs
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MDPI and ACS Style

Wang, T.; Wan, X.; Jin, H.; Li, H.; Sun, Y.; Liang, R.; Xu, J.; Zheng, L. Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs. Electronics 2019, 8, 598.

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