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Journal: Electronics, 2019
Volume: 8
Number: 574
Article:
A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance
Authors:
by
Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang and Wei Li
Link:
https://www.mdpi.com/2079-9292/8/5/574
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