Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver
AbstractRadio frequency (RF) systems in space applications are usually designed for a single task and its requirements. Flexibility is mostly limited to software-defined adaption of the signal processing in digital signal processors (DSP) or field-programmable gate arrays (FPGA). RF specifications, such as frequency band selection or RF filter bandwidth are thereby restricted to the specific application requirements. New radio frequency integrated circuit (RFIC) devices also allow the software-based reconfiguration of various RF specifications. A transfer of this RFIC technology to space systems would have a massive impact to future radio systems for space applications. The benefit of this RFIC technology allows a selection of different RF radio applications, independent of their RF parameters, to be executed on a single unit and, thus, reduces the size and weight of the whole system. Since most RF application sin space system require a high level of reliability and the RFIC is not designed for the harsh environment in space, a characterization under these special environmental conditions is mandatory. In this paper, we present the single event effect (SEE) characterization of a selected RFIC device under proton irradiation. The RFIC being tested is immune to proton induced single event latch-up and other destructive events and shows a very low response to single failure interrupts. Thus, the device is defined as a good candidate for future, highly integrated radio system in space applications. View Full-Text
Share & Cite This Article
Budroweit, J.; Jaksch, M.P.; Sznajder, M. Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver. Electronics 2019, 8, 519.
Budroweit J, Jaksch MP, Sznajder M. Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver. Electronics. 2019; 8(5):519.Chicago/Turabian Style
Budroweit, Jan; Jaksch, Mattis P.; Sznajder, Maciej. 2019. "Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver." Electronics 8, no. 5: 519.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.