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Journal: Electronics, 2019
Volume: 8
Number: 406
Article:
Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate
Authors:
by
Biyan Liao, Quanbin Zhou, Jian Qin and Hong Wang
Link:
https://www.mdpi.com/2079-9292/8/4/406
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