A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition.
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