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Open AccessFeature PaperArticle

A Regulated Charge Pump with Extremely Low Output Ripple

Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Electronics 2019, 8(11), 1293; https://doi.org/10.3390/electronics8111293
Received: 30 September 2019 / Revised: 31 October 2019 / Accepted: 3 November 2019 / Published: 6 November 2019
(This article belongs to the Section Circuit and Signal Processing)
In this paper, we present a regulated charge pump with extremely low output ripple (<1 mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 μ m standard CMOS process. The die area of this charge pump is 0.163 mm 2 . While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V. View Full-Text
Keywords: charge pump; dc–dc converter; variable-frequency regulation; floating-gate transistor; analog nonvolatile memory charge pump; dc–dc converter; variable-frequency regulation; floating-gate transistor; analog nonvolatile memory
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MDPI and ACS Style

Navidi, M.M.; Graham, D.W. A Regulated Charge Pump with Extremely Low Output Ripple. Electronics 2019, 8, 1293.

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