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Open AccessArticle

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

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Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Korea
2
Semiconductor Process Laboratory, WONIK IPS, Gyeonggi-do 17709, Korea
3
School of Integrated Technology, Yonsei University, Incheon 21983, Korea
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Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea
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Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Korea
*
Authors to whom correspondence should be addressed.
Electronics 2019, 8(10), 1099; https://doi.org/10.3390/electronics8101099
Received: 4 September 2019 / Revised: 27 September 2019 / Accepted: 27 September 2019 / Published: 29 September 2019
(This article belongs to the Section Semiconductor Devices)
In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide. View Full-Text
Keywords: nitrogen incorporation; CuON; p-type oxide semiconductor; reactive sputtering; thin-film transistors nitrogen incorporation; CuON; p-type oxide semiconductor; reactive sputtering; thin-film transistors
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MDPI and ACS Style

Ahn, S.-Y.; Park, K.; Choi, D.; Park, J.; Kim, Y.J.; Kim, H.-S. A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen. Electronics 2019, 8, 1099.

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