Jang, J.T.; Ahn, G.; Choi, S.-J.; Kim, D.M.; Kim, D.H.
Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing. Electronics 2019, 8, 1087.
https://doi.org/10.3390/electronics8101087
AMA Style
Jang JT, Ahn G, Choi S-J, Kim DM, Kim DH.
Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing. Electronics. 2019; 8(10):1087.
https://doi.org/10.3390/electronics8101087
Chicago/Turabian Style
Jang, Jun Tae, Geumho Ahn, Sung-Jin Choi, Dong Myong Kim, and Dae Hwan Kim.
2019. "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics 8, no. 10: 1087.
https://doi.org/10.3390/electronics8101087
APA Style
Jang, J. T., Ahn, G., Choi, S.-J., Kim, D. M., & Kim, D. H.
(2019). Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing. Electronics, 8(10), 1087.
https://doi.org/10.3390/electronics8101087