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Open AccessArticle

Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition

Key laboratory of Specialty Fiber Optics and Optical Access Networks, Joint International Research Laboratory of Specialty Fiber Optics and Advanced Communication, Shanghai Institute for Advanced Communication and Data Science, Shanghai University, Shanghai 200444, China
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Electronics 2018, 7(10), 259; https://doi.org/10.3390/electronics7100259
Received: 27 September 2018 / Revised: 10 October 2018 / Accepted: 11 October 2018 / Published: 18 October 2018
(This article belongs to the Special Issue Nanoelectronic Materials, Devices and Modeling)
The effects of ultraviolet irradiation on luminescent centres in bismuth-doped (BDF) and bismuth/erbium co-doped (BEDF) optical fibers were examined in this study. The fibers were fabricated by modified chemical vapor deposition combining with atomic layer deposition method. The fibers were exposed to irradiation from a 193 nm pulsed wave argon fluoride laser, and an 830 nm wavelength laser diode pump source was employed for excitation. The experimental results showed that, for the BDF, the transmission loss was slightly reduced and the luminescence intensity was increased at the bismuth-related active aluminum centre (BAC-Al). Then, for the BEDF, the transmission loss was increased a little and the luminescence intensity was also increased at the BAC-Al centre. However, the luminescence intensity was decreased at approximately 1420 nm of the bismuth-related active silica centre (BAC-Si) for all fiber samples. One possible formation mechanism for luminescence intensity changes was probably associated with the valence state transfer of bismuth ions. The other possible mechanism was that the ArF-driven two-photon process caused luminescence changes in BAC-Al and BAC-Si. It was very important to reveal nature of luminescence properties of Bi-doped and Bi/Er co-doped optical fiber. View Full-Text
Keywords: UV irradiation; luminescent centres; bismuth ions; two-photon process UV irradiation; luminescent centres; bismuth ions; two-photon process
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MDPI and ACS Style

Uddin, R.; Wen, J.; He, T.; Pang, F.; Chen, Z.; Wang, T. Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition. Electronics 2018, 7, 259. https://doi.org/10.3390/electronics7100259

AMA Style

Uddin R, Wen J, He T, Pang F, Chen Z, Wang T. Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition. Electronics. 2018; 7(10):259. https://doi.org/10.3390/electronics7100259

Chicago/Turabian Style

Uddin, Rahim; Wen, Jianxiang; He, Tao; Pang, Fufei; Chen, Zhenyi; Wang, Tingyun. 2018. "Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition" Electronics 7, no. 10: 259. https://doi.org/10.3390/electronics7100259

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