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Journal: Electronics, 2025
Volume: 14
Number: 1764

Article: Investigation of Temperature-Dependent Gate Degradation in Normally-Off AlGaN/GaN High-Electron-Mobility Transistor p-GaN
Authors: by Jeonghyeok Yoon and Hyungtak Kim
Link: https://www.mdpi.com/2079-9292/14/9/1764

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