Jin, M.; Bhattacharya, M.; Yu, H.; Qian, J.; Houshmand, S.; Shimbori, A.; White, M.H.; Agarwal, A.K.
Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs. Electronics 2025, 14, 1366.
https://doi.org/10.3390/electronics14071366
AMA Style
Jin M, Bhattacharya M, Yu H, Qian J, Houshmand S, Shimbori A, White MH, Agarwal AK.
Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs. Electronics. 2025; 14(7):1366.
https://doi.org/10.3390/electronics14071366
Chicago/Turabian Style
Jin, Michael, Monikuntala Bhattacharya, Hengyu Yu, Jiashu Qian, Shiva Houshmand, Atsushi Shimbori, Marvin H. White, and Anant K. Agarwal.
2025. "Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs" Electronics 14, no. 7: 1366.
https://doi.org/10.3390/electronics14071366
APA Style
Jin, M., Bhattacharya, M., Yu, H., Qian, J., Houshmand, S., Shimbori, A., White, M. H., & Agarwal, A. K.
(2025). Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs. Electronics, 14(7), 1366.
https://doi.org/10.3390/electronics14071366
