Article Versions Notes

Sun Y, Ma K, Yuan X, Chen A, Liu X, Song Y, Li X, Zi T, Zhou Y, Liu S. Investigation of a Physical Model for the Reverse Recovery Characteristics of PT-PIN FRD with a Buffer Layer. Electronics. 2025; 14(3):570. https://doi.org/10.3390/electronics14030570

Sun, Yameng, Kun Ma, Xiong Yuan, Anning Chen, Xun Liu, Yifan Song, Xuehan Li, Tongtong Zi, Yang Zhou, and Sheng Liu. 2025. "Investigation of a Physical Model for the Reverse Recovery Characteristics of PT-PIN FRD with a Buffer Layer" Electronics 14, no. 3: 570. https://doi.org/10.3390/electronics14030570

Sun, Y., Ma, K., Yuan, X., Chen, A., Liu, X., Song, Y., Li, X., Zi, T., Zhou, Y., & Liu, S. (2025). Investigation of a Physical Model for the Reverse Recovery Characteristics of PT-PIN FRD with a Buffer Layer. Electronics, 14(3), 570. https://doi.org/10.3390/electronics14030570