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Volume 13
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Article

A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode

by
Chenlu Wang
1,
Junyi Luo
1,
Zhiwei Zhang
1,*,
Chao Gu
2,
Haipeng Zhu
1 and
Luyu Zhang
1
1
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310005, China
2
ECIT Institute, Queen’s University Belfast, Belfast BT7 1NN, UK
*
Author to whom correspondence should be addressed.
Electronics 2024, 13(14), 2786; https://doi.org/10.3390/electronics13142786
Submission received: 25 May 2024 / Revised: 4 July 2024 / Accepted: 15 July 2024 / Published: 16 July 2024
(This article belongs to the Special Issue Recent Advances in RF Rectifying Technology for EM Energy Harvesting and Wireless Power Transfer)
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Abstract

In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm.
Keywords: wide band; class-EFJ; GaN transistor; high efficiency; rectifier wide band; class-EFJ; GaN transistor; high efficiency; rectifier

Share and Cite

MDPI and ACS Style

Wang, C.; Luo, J.; Zhang, Z.; Gu, C.; Zhu, H.; Zhang, L. A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode. Electronics 2024, 13, 2786. https://doi.org/10.3390/electronics13142786

AMA Style

Wang C, Luo J, Zhang Z, Gu C, Zhu H, Zhang L. A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode. Electronics. 2024; 13(14):2786. https://doi.org/10.3390/electronics13142786

Chicago/Turabian Style

Wang, Chenlu, Junyi Luo, Zhiwei Zhang, Chao Gu, Haipeng Zhu, and Luyu Zhang. 2024. "A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode" Electronics 13, no. 14: 2786. https://doi.org/10.3390/electronics13142786

APA Style

Wang, C., Luo, J., Zhang, Z., Gu, C., Zhu, H., & Zhang, L. (2024). A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode. Electronics, 13(14), 2786. https://doi.org/10.3390/electronics13142786

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