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Journal: Electronics, 2024
Volume: 13
Number: 2783

Article: Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
Authors: by Gyuhyung Lee, Jeongyong Yang, Min Jae Yeom, Sisung Yoon and Geonwook Yoo
Link: https://www.mdpi.com/2079-9292/13/14/2783

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