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Journal: Electronics, 2024
Volume: 13
Number: 2350
2350
Article: Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs
Authors: by Valentin Ackermann, Blend Mohamad, Hala El Rammouz, Vishwajeet Maurya, Eric Frayssinet, Yvon Cordier, Matthew Charles, Gauthier Lefevre, Julien Buckley and Bassem Salem
Link: https://www.mdpi.com/2079-9292/13/12/2350

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