Yang, X.; Zhai, X.; Long, S.; Li, M.; Dong, H.; He, Y.
Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation. Electronics 2023, 12, 2116.
https://doi.org/10.3390/electronics12092116
AMA Style
Yang X, Zhai X, Long S, Li M, Dong H, He Y.
Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation. Electronics. 2023; 12(9):2116.
https://doi.org/10.3390/electronics12092116
Chicago/Turabian Style
Yang, Xiaoqing, Xiaoyu Zhai, Shanshan Long, Meng Li, Hexin Dong, and Yi He.
2023. "Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation" Electronics 12, no. 9: 2116.
https://doi.org/10.3390/electronics12092116
APA Style
Yang, X., Zhai, X., Long, S., Li, M., Dong, H., & He, Y.
(2023). Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation. Electronics, 12(9), 2116.
https://doi.org/10.3390/electronics12092116