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Crupi G, Latino M, Gugliandolo G, Marinković Z, Cai J, Bosi G, Raffo A, Fazio E, Donato N. A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements
. Electronics. 2023; 12(8):1771. https://doi.org/10.3390/electronics12081771

Crupi, Giovanni, Mariangela Latino, Giovanni Gugliandolo, Zlatica Marinković, Jialin Cai, Gianni Bosi, Antonio Raffo, Enza Fazio, and Nicola Donato. 2023. "A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements
" Electronics 12, no. 8: 1771. https://doi.org/10.3390/electronics12081771

Crupi, G., Latino, M., Gugliandolo, G., Marinković, Z., Cai, J., Bosi, G., Raffo, A., Fazio, E., & Donato, N. (2023). A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements
. Electronics, 12(8), 1771. https://doi.org/10.3390/electronics12081771