Ji, Q.; Liu, J.; Yang, M.; Hu, X.; Wang, G.; Qiu, M.; Liu, S.
Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs. Electronics 2023, 12, 1473.
https://doi.org/10.3390/electronics12061473
AMA Style
Ji Q, Liu J, Yang M, Hu X, Wang G, Qiu M, Liu S.
Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs. Electronics. 2023; 12(6):1473.
https://doi.org/10.3390/electronics12061473
Chicago/Turabian Style
Ji, Qizheng, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu, and Shanghe Liu.
2023. "Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs" Electronics 12, no. 6: 1473.
https://doi.org/10.3390/electronics12061473
APA Style
Ji, Q., Liu, J., Yang, M., Hu, X., Wang, G., Qiu, M., & Liu, S.
(2023). Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs. Electronics, 12(6), 1473.
https://doi.org/10.3390/electronics12061473