Next Article in Journal
Performance Improvement of DTC-SVM of PMSM with Compensation for the Dead Time Effect and Power Switch Loss Based on Extended Kalman Filter
Previous Article in Journal
SRFPI-LADRC Based Control Strategy for Off-Grid Single-Phase Inverter: Design, Analysis, and Verification
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Electronics
Volume 12
Issue 4
10.3390/electronics12040963
electronics-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

A Fully Differential Difference Transconductance Amplifier Topology Based on CMOS Inverters

by
Otávio Soares Silva
1,*,
Rodrigo Aparecido da Silva Braga
1,*,
Paulo Marcos Pinto
2,
Luís Henrique de Carvalho Ferreira
2 and
Gustavo Della Colletta
2
1
Institute of Science and Technology, Federal University of Itajuba, Itabira 35903-087, MG, Brazil
2
Institute of Systems Engineering and Information Technology, Federal University of Itajuba, Itajuba 37500-903, MG, Brazil
*
Authors to whom correspondence should be addressed.
Electronics 2023, 12(4), 963; https://doi.org/10.3390/electronics12040963
Submission received: 19 December 2022 / Revised: 7 February 2023 / Accepted: 8 February 2023 / Published: 15 February 2023
(This article belongs to the Topic Advances in Microelectronics and Semiconductor Engineering)
Browse Figures
Review Reports Versions Notes

Abstract

This manuscript presents a fully differential difference transconductance amplifier (FDDTA) architecture based on CMOS inverters. Designed in a 130-nm CMOS process it operates in weak inversion when supplied with 0.25 V. In addition, the FDDTA requires no supplementary external calibration circuit, like tail current or bias voltage sources, since it relies on the distributed layout technique that intrinsically matches the CMOS inverters. For analytical purposes, we carried out a detailed investigation that describes all the concepts and the whole operation of the FDDTA architecture. Furthermore, a comparison between the modeling equations and measured data assures high performance.
Keywords: fully differential difference transconductance amplifier; CMOS inverters; differential buffer configuration; weak inversion region; low-power circuits fully differential difference transconductance amplifier; CMOS inverters; differential buffer configuration; weak inversion region; low-power circuits

Share and Cite

MDPI and ACS Style

Silva, O.S.; Braga, R.A.d.S.; Pinto, P.M.; Ferreira, L.H.d.C.; Colletta, G.D. A Fully Differential Difference Transconductance Amplifier Topology Based on CMOS Inverters. Electronics 2023, 12, 963. https://doi.org/10.3390/electronics12040963

AMA Style

Silva OS, Braga RAdS, Pinto PM, Ferreira LHdC, Colletta GD. A Fully Differential Difference Transconductance Amplifier Topology Based on CMOS Inverters. Electronics. 2023; 12(4):963. https://doi.org/10.3390/electronics12040963

Chicago/Turabian Style

Silva, Otávio Soares, Rodrigo Aparecido da Silva Braga, Paulo Marcos Pinto, Luís Henrique de Carvalho Ferreira, and Gustavo Della Colletta. 2023. "A Fully Differential Difference Transconductance Amplifier Topology Based on CMOS Inverters" Electronics 12, no. 4: 963. https://doi.org/10.3390/electronics12040963

APA Style

Silva, O. S., Braga, R. A. d. S., Pinto, P. M., Ferreira, L. H. d. C., & Colletta, G. D. (2023). A Fully Differential Difference Transconductance Amplifier Topology Based on CMOS Inverters. Electronics, 12(4), 963. https://doi.org/10.3390/electronics12040963

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop