Ding, H.; Cui, J.; Zheng, Q.; Xu, H.; Gao, N.; Xun, M.; Yu, G.; He, C.; Li, Y.; Guo, Q.
Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors. Electronics 2023, 12, 1000.
https://doi.org/10.3390/electronics12041000
AMA Style
Ding H, Cui J, Zheng Q, Xu H, Gao N, Xun M, Yu G, He C, Li Y, Guo Q.
Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors. Electronics. 2023; 12(4):1000.
https://doi.org/10.3390/electronics12041000
Chicago/Turabian Style
Ding, Hongyu, Jiangwei Cui, Qiwen Zheng, Haitao Xu, Ningfei Gao, Mingzhu Xun, Gang Yu, Chengfa He, Yudong Li, and Qi Guo.
2023. "Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors" Electronics 12, no. 4: 1000.
https://doi.org/10.3390/electronics12041000
APA Style
Ding, H., Cui, J., Zheng, Q., Xu, H., Gao, N., Xun, M., Yu, G., He, C., Li, Y., & Guo, Q.
(2023). Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors. Electronics, 12(4), 1000.
https://doi.org/10.3390/electronics12041000