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Journal: Electronics, 2023
Volume: 12
Number: 4482
4482
Article: Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN_x GaN MISFET with In Situ H₂/N₂ Plasma Pretreatment
Authors: by Chengyu Huang, Jinyan Wang, Maojun Wang, Jin He, Mengjun Li, Bin Zhang and Yandong He
Link: https://www.mdpi.com/2079-9292/12/21/4482

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