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Carneiro E, Rennesson S, Tamariz S, Harrouche K, Semond F, Medjdoub F. Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate. Electronics. 2023; 12(13):2974. https://doi.org/10.3390/electronics12132974

Carneiro, Elodie, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, and Farid Medjdoub. 2023. "Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate" Electronics 12, no. 13: 2974. https://doi.org/10.3390/electronics12132974

Carneiro, E., Rennesson, S., Tamariz, S., Harrouche, K., Semond, F., & Medjdoub, F. (2023). Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate. Electronics, 12(13), 2974. https://doi.org/10.3390/electronics12132974