Liu, H.; Wei, J.; Wei, Z.; Liu, S.; Shi, L.
Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness. Electronics 2023, 12, 2551.
https://doi.org/10.3390/electronics12112551
AMA Style
Liu H, Wei J, Wei Z, Liu S, Shi L.
Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness. Electronics. 2023; 12(11):2551.
https://doi.org/10.3390/electronics12112551
Chicago/Turabian Style
Liu, Hao, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu, and Longxing Shi.
2023. "Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness" Electronics 12, no. 11: 2551.
https://doi.org/10.3390/electronics12112551
APA Style
Liu, H., Wei, J., Wei, Z., Liu, S., & Shi, L.
(2023). Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness. Electronics, 12(11), 2551.
https://doi.org/10.3390/electronics12112551