Article Versions Notes

Jeon YP, Hong D, Lee S-h, Lee EJ, Cho TW, Kim DY, Kim CY, Park J, Kim YJ, Yoo YJ, et al. Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis. Electronics. 2023; 12(1):47. https://doi.org/10.3390/electronics12010047

Jeon, Young Pyo, Dongpyo Hong, Sang-hwa Lee, Eun Jung Lee, Tae Woong Cho, Do Yeon Kim, Chae Yeon Kim, JuSang Park, Young Jun Kim, Young Joon Yoo, and et al. 2023. "Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis" Electronics 12, no. 1: 47. https://doi.org/10.3390/electronics12010047

Jeon, Y. P., Hong, D., Lee, S.-h., Lee, E. J., Cho, T. W., Kim, D. Y., Kim, C. Y., Park, J., Kim, Y. J., Yoo, Y. J., & Park, S. Y. (2023). Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis. Electronics, 12(1), 47. https://doi.org/10.3390/electronics12010047