A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors

Shah, Syed Adeel Ali; De Matteis, Marcello; Kroha, Hubert; Fras, Markus; Kortner, Oliver; Richter, Robert; Baschirotto, Andrea

doi:10.3390/electronics11071001

Open AccessArticle

A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors

by

Syed Adeel Ali Shah

^1,*

,

Marcello De Matteis

¹

,

Hubert Kroha

²,

Markus Fras

²,

Oliver Kortner

²,

Robert Richter

² and

Andrea Baschirotto

¹

Physics Department ‘G. Occhialini’, Milano-Bicocca University, 20126 Milan, Italy

²

Max-Planck-Institute for Physics, 80805 Muenchen, Germany

^*

Author to whom correspondence should be addressed.

Electronics 2022, 11(7), 1001; https://doi.org/10.3390/electronics11071001

Submission received: 15 February 2022 / Revised: 21 March 2022 / Accepted: 22 March 2022 / Published: 24 March 2022

(This article belongs to the Special Issue Design of Mixed Analog/Digital Circuits)

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Abstract

A 4-channel front-end electronics (4 × FEE) system for the muon drift tube in the ATLAS detector in the High-Luminosity LHC is presented. The overall channel architecture is optimized to reduce the power and area of the design. Each channel comprises a charge-sensitive preamplifier (CSP), shaper, discriminator and differential low-voltage signaling drivers. The proposed channel operates with a 5–100 fC input charge and exhibits a linear sensitivity of 8 mV/fC for the entire input charge range. The peaking time delay of the analog channel is 14.6 ns. At the output, the time representation of the input signal is provided in terms of the CMOS level and in scalable low-voltage signal (SLVS). The FEE consumes a current of 10.6 mA per channel from a single 1.2 V supply voltage. The full 4 × FEE design is realized in TSMC 65 nm CMOS technology and its die-area is 2 mm × 2 mm.

Keywords: read-out channel; front-end electronics; ATLAS experiment; monitored drift tube

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MDPI and ACS Style

Shah, S.A.A.; De Matteis, M.; Kroha, H.; Fras, M.; Kortner, O.; Richter, R.; Baschirotto, A. A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors. Electronics 2022, 11, 1001. https://doi.org/10.3390/electronics11071001

AMA Style

Shah SAA, De Matteis M, Kroha H, Fras M, Kortner O, Richter R, Baschirotto A. A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors. Electronics. 2022; 11(7):1001. https://doi.org/10.3390/electronics11071001

Chicago/Turabian Style

Shah, Syed Adeel Ali, Marcello De Matteis, Hubert Kroha, Markus Fras, Oliver Kortner, Robert Richter, and Andrea Baschirotto. 2022. "A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors" Electronics 11, no. 7: 1001. https://doi.org/10.3390/electronics11071001

APA Style

Shah, S. A. A., De Matteis, M., Kroha, H., Fras, M., Kortner, O., Richter, R., & Baschirotto, A. (2022). A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors. Electronics, 11(7), 1001. https://doi.org/10.3390/electronics11071001

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

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A 4-Channel Ultra-Low Power Front-End Electronics in 65 nm CMOS for ATLAS MDT Detectors

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