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Wang K, Zhang X, Li B, Li D, Zhao F, Bu J, Han Z. A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components. Electronics. 2022; 11(23):4022. https://doi.org/10.3390/electronics11234022

Wang, Kewei, Xinyi Zhang, Bo Li, Duoli Li, Fazhan Zhao, Jianhui Bu, and Zhengsheng Han. 2022. "A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components" Electronics 11, no. 23: 4022. https://doi.org/10.3390/electronics11234022

Wang, K., Zhang, X., Li, B., Li, D., Zhao, F., Bu, J., & Han, Z. (2022). A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components. Electronics, 11(23), 4022. https://doi.org/10.3390/electronics11234022