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Journal: ElectronicsVolume: 11Number: 4022
Article: A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components
- Authors:
- Kewei Wang1,2,3,
- Xinyi Zhang1,2,3 and
- Bo Li1,2
- et al.
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