Wang, K.; Zhang, X.; Li, B.; Li, D.; Zhao, F.; Bu, J.; Han, Z.
A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components. Electronics 2022, 11, 4022.
https://doi.org/10.3390/electronics11234022
AMA Style
Wang K, Zhang X, Li B, Li D, Zhao F, Bu J, Han Z.
A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components. Electronics. 2022; 11(23):4022.
https://doi.org/10.3390/electronics11234022
Chicago/Turabian Style
Wang, Kewei, Xinyi Zhang, Bo Li, Duoli Li, Fazhan Zhao, Jianhui Bu, and Zhengsheng Han.
2022. "A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components" Electronics 11, no. 23: 4022.
https://doi.org/10.3390/electronics11234022
APA Style
Wang, K., Zhang, X., Li, B., Li, D., Zhao, F., Bu, J., & Han, Z.
(2022). A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components. Electronics, 11(23), 4022.
https://doi.org/10.3390/electronics11234022