Peer-Review Record
The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs
Electronics 2022, 11(19), 3188; https://doi.org/10.3390/electronics11193188
by
Peixiong Zhao 1,*
, Bo Li 2, Hainan Liu 2, Jinhu Yang 1,3, Yang Jiao 1,3, Qiyu Chen 1,3, Youmei Sun 1 and Jie Liu 1,*
, Bo Li 2, Hainan Liu 2, Jinhu Yang 1,3, Yang Jiao 1,3, Qiyu Chen 1,3, Youmei Sun 1 and Jie Liu 1,*Reviewer 1:
Reviewer 2:
Anonymous
Electronics 2022, 11(19), 3188; https://doi.org/10.3390/electronics11193188
Submission received: 12 September 2022
/
Revised: 29 September 2022
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Accepted: 30 September 2022
/
Published: 5 October 2022
(This article belongs to the Special Issue Radiation Effects of Advanced Electronic Devices and Circuits)
Round 1
Reviewer 1 Report
A well written report on radiation effects on SRAM, with interesting conclusions.
Minor remarks:
1. Contrary to the text, I no error bars are shown in Fig.5.
2. A drawing showing the BUSFET device structure would be beneficial for the readers.
Author Response
Please see the attachment.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
Comments for author File: Comments.pdf
Author Response
Please see the attachment.
Author Response File: Author Response.pdf
