Lee, I.-G.; Jo, H.-B.; Baek, J.-M.; Lee, S.-T.; Choi, S.-M.; Kim, H.-J.; Park, W.-S.; Yoo, J.-H.; Ko, D.-H.; Kim, T.-W.;
et al. Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts. Electronics 2022, 11, 2744.
https://doi.org/10.3390/electronics11172744
AMA Style
Lee I-G, Jo H-B, Baek J-M, Lee S-T, Choi S-M, Kim H-J, Park W-S, Yoo J-H, Ko D-H, Kim T-W,
et al. Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts. Electronics. 2022; 11(17):2744.
https://doi.org/10.3390/electronics11172744
Chicago/Turabian Style
Lee, In-Geun, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim,
and et al. 2022. "Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts" Electronics 11, no. 17: 2744.
https://doi.org/10.3390/electronics11172744
APA Style
Lee, I.-G., Jo, H.-B., Baek, J.-M., Lee, S.-T., Choi, S.-M., Kim, H.-J., Park, W.-S., Yoo, J.-H., Ko, D.-H., Kim, T.-W., Kim, S.-K., Kim, J.-G., Yun, J., Kim, T., Lee, J.-H., Shin, C.-S., Lee, J.-H., Seo, K.-S., & Kim, D.-H.
(2022). Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts. Electronics, 11(17), 2744.
https://doi.org/10.3390/electronics11172744
