Boukortt, N.E.I.; Lenka, T.R.; Patanè, S.; Crupi, G.
Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure. Electronics 2022, 11, 91.
https://doi.org/10.3390/electronics11010091
AMA Style
Boukortt NEI, Lenka TR, Patanè S, Crupi G.
Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure. Electronics. 2022; 11(1):91.
https://doi.org/10.3390/electronics11010091
Chicago/Turabian Style
Boukortt, Nour El I., Trupti Ranjan Lenka, Salvatore Patanè, and Giovanni Crupi.
2022. "Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure" Electronics 11, no. 1: 91.
https://doi.org/10.3390/electronics11010091
APA Style
Boukortt, N. E. I., Lenka, T. R., Patanè, S., & Crupi, G.
(2022). Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure. Electronics, 11(1), 91.
https://doi.org/10.3390/electronics11010091
