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Journal: ElectronicsVolume: 10Number: 2642
Article: Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation
  • Authors:
  • Sakhone Pharkphoumy1,
  • Vallivedu Janardhanam1 and
  • Tae-Hoon Jang2
  • et al.
Link: https://www.mdpi.com/2079-9292/10/21/2642

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