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Colangeli S, Ciccognani W, Longhi PE, Pace L, Poulain J, Leblanc R, Limiti E. Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths. Electronics. 2021; 10(2):134. https://doi.org/10.3390/electronics10020134

Colangeli, Sergio, Walter Ciccognani, Patrick Ettore Longhi, Lorenzo Pace, Julien Poulain, Rémy Leblanc, and Ernesto Limiti. 2021. "Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths" Electronics 10, no. 2: 134. https://doi.org/10.3390/electronics10020134

Colangeli, S., Ciccognani, W., Longhi, P. E., Pace, L., Poulain, J., Leblanc, R., & Limiti, E. (2021). Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths. Electronics, 10(2), 134. https://doi.org/10.3390/electronics10020134