Colangeli, S.; Ciccognani, W.; Longhi, P.E.; Pace, L.; Poulain, J.; Leblanc, R.; Limiti, E.
Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths. Electronics 2021, 10, 134.
https://doi.org/10.3390/electronics10020134
AMA Style
Colangeli S, Ciccognani W, Longhi PE, Pace L, Poulain J, Leblanc R, Limiti E.
Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths. Electronics. 2021; 10(2):134.
https://doi.org/10.3390/electronics10020134
Chicago/Turabian Style
Colangeli, Sergio, Walter Ciccognani, Patrick Ettore Longhi, Lorenzo Pace, Julien Poulain, Rémy Leblanc, and Ernesto Limiti.
2021. "Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths" Electronics 10, no. 2: 134.
https://doi.org/10.3390/electronics10020134
APA Style
Colangeli, S., Ciccognani, W., Longhi, P. E., Pace, L., Poulain, J., Leblanc, R., & Limiti, E.
(2021). Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths. Electronics, 10(2), 134.
https://doi.org/10.3390/electronics10020134