Aziza, H.; Hamdioui, S.; Fieback, M.; Taouil, M.; Moreau, M.; Girard, P.; Virazel, A.; Coulié, K.
Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State. Electronics 2021, 10, 2222.
https://doi.org/10.3390/electronics10182222
AMA Style
Aziza H, Hamdioui S, Fieback M, Taouil M, Moreau M, Girard P, Virazel A, Coulié K.
Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State. Electronics. 2021; 10(18):2222.
https://doi.org/10.3390/electronics10182222
Chicago/Turabian Style
Aziza, Hassan, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, Arnaud Virazel, and Karine Coulié.
2021. "Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State" Electronics 10, no. 18: 2222.
https://doi.org/10.3390/electronics10182222
APA Style
Aziza, H., Hamdioui, S., Fieback, M., Taouil, M., Moreau, M., Girard, P., Virazel, A., & Coulié, K.
(2021). Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State. Electronics, 10(18), 2222.
https://doi.org/10.3390/electronics10182222