Article Versions Notes

Min S-H, Kim J-I, Sattorov M, Kim S, Hong D, Kim S, Hong B-H, Park C, Ma S, Kim M, et al. Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide. Electronics. 2021; 10(16):1884. https://doi.org/10.3390/electronics10161884

Min, Sun-Hong, Jung-Il Kim, Matlabjon Sattorov, Seontae Kim, Dongpyo Hong, Seonmyeong Kim, Bong-Hwan Hong, Chawon Park, Sukhwal Ma, Minho Kim, and et al. 2021. "Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide" Electronics 10, no. 16: 1884. https://doi.org/10.3390/electronics10161884

Min, S.-H., Kim, J.-I., Sattorov, M., Kim, S., Hong, D., Kim, S., Hong, B.-H., Park, C., Ma, S., Kim, M., Lee, K.-C., Lee, Y.-J., Kwon, H.-B., Yoo, Y.-J., Park, S.-Y., & Park, G.-S. (2021). Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide. Electronics, 10(16), 1884. https://doi.org/10.3390/electronics10161884