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Journal: Electronics, 2021
Volume: 10
Number: 1561
Article:
Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure
Authors:
by
Seonjun Choi, Changhwan Choi, Jae Kyeong Jeong, Myounggon Kang and Yun-heub Song
Link:
https://www.mdpi.com/2079-9292/10/13/1561
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