Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test
Abstract
:1. Introduction
2. Experimental Details
3. Results
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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VDC (V) | 50 | 100 | 150 | 200 | 250 | 300 | 400 |
Inductor (μH) | 20 | 40 | 60 | 80 | 100 | 120 | 160 |
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Wang, W.; Liang, Y.; Zhang, M.; Lin, F.; Wen, F.; Wang, H. Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test. Electronics 2021, 10, 1202. https://doi.org/10.3390/electronics10101202
Wang W, Liang Y, Zhang M, Lin F, Wen F, Wang H. Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test. Electronics. 2021; 10(10):1202. https://doi.org/10.3390/electronics10101202
Chicago/Turabian StyleWang, Wei, Yan Liang, Minghui Zhang, Fang Lin, Feng Wen, and Hongxing Wang. 2021. "Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test" Electronics 10, no. 10: 1202. https://doi.org/10.3390/electronics10101202