Article Versions Notes

Huang C-R, Liu C-H, Wang H-C, Kao H-L, Chiu H-C, Chen C-T, Chang K-J. The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design. Electronics. 2021; 10(1):46. https://doi.org/10.3390/electronics10010046

Huang, Chong-Rong, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Hsien-Chin Chiu, Chih-Tien Chen, and Kuo-Jen Chang. 2021. "The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design" Electronics 10, no. 1: 46. https://doi.org/10.3390/electronics10010046

Huang, C.-R., Liu, C.-H., Wang, H.-C., Kao, H.-L., Chiu, H.-C., Chen, C.-T., & Chang, K.-J. (2021). The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design. Electronics, 10(1), 46. https://doi.org/10.3390/electronics10010046