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Open AccessArticle

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

1
Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
2
Faculty of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, Poland
3
Institute of Photonics and Electronics, Czech Academy of Sciences, Chaberská 57, 18251 Praha 8-Kobylisy, Czech Republic
4
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, PL-01142 Warsaw, Poland
5
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
*
Author to whom correspondence should be addressed.
Electronics 2021, 10(1), 45; https://doi.org/10.3390/electronics10010045
Received: 12 October 2020 / Revised: 21 December 2020 / Accepted: 23 December 2020 / Published: 29 December 2020
(This article belongs to the Special Issue Micro- and Nanotechnology of Wide Bandgap Semiconductors)
For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures. View Full-Text
Keywords: nanowires; GaN; AlGaN; LEDs; growth polarity nanowires; GaN; AlGaN; LEDs; growth polarity
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MDPI and ACS Style

Reszka, A.; Korona, K.P.; Tiagulskyi, S.; Turski, H.; Jahn, U.; Kret, S.; Bożek, R.; Sobanska, M.; Zytkiewicz, Z.R.; Kowalski, B.J. Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs. Electronics 2021, 10, 45. https://doi.org/10.3390/electronics10010045

AMA Style

Reszka A, Korona KP, Tiagulskyi S, Turski H, Jahn U, Kret S, Bożek R, Sobanska M, Zytkiewicz ZR, Kowalski BJ. Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs. Electronics. 2021; 10(1):45. https://doi.org/10.3390/electronics10010045

Chicago/Turabian Style

Reszka, Anna; Korona, Krzysztof P.; Tiagulskyi, Stanislav; Turski, Henryk; Jahn, Uwe; Kret, Slawomir; Bożek, Rafał; Sobanska, Marta; Zytkiewicz, Zbigniew R.; Kowalski, Bogdan J. 2021. "Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs" Electronics 10, no. 1: 45. https://doi.org/10.3390/electronics10010045

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