Next Article in Journal
Including Liquid Metal into Porous Elastomeric Films for Flexible and Enzyme-Free Glucose Fuel Cells: A Preliminary Evaluation
Previous Article in Journal
Low-Cost Low-Power Acceleration of a Microwave Imaging Algorithm for Brain Stroke Monitoring
Article Menu

Export Article

Open AccessReview
J. Low Power Electron. Appl. 2018, 8(4), 44; https://doi.org/10.3390/jlpea8040044

A Recent Progress of Spintronics Devices for Integrated Circuit Applications

1,2,3,4,†,* and 1,†
1
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
2
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
3
Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
4
Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Sendai 980-8577, Japan
JST-ACCEL, Saitama 332-0012, Japan.
*
Author to whom correspondence should be addressed.
Received: 28 October 2018 / Revised: 9 November 2018 / Accepted: 9 November 2018 / Published: 13 November 2018
(This article belongs to the Special Issue Spin-Orbit Torque/Voltage-Controlled MRAM and Low Power Application)
Full-Text   |   PDF [3748 KB, uploaded 16 November 2018]   |  

Abstract

Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application. View Full-Text
Keywords: integrated circuits; nonvolatile memory; spintronics; magnetic tunnel junction; spin-transfer torque; spin-orbit torque; electric field effect integrated circuits; nonvolatile memory; spintronics; magnetic tunnel junction; spin-transfer torque; spin-orbit torque; electric field effect
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Endoh, T.; Honjo, H. A Recent Progress of Spintronics Devices for Integrated Circuit Applications. J. Low Power Electron. Appl. 2018, 8, 44.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top