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Journal: J. Low Power Electron. Appl., 2018
Volume: 8
Number: 28
28
Article: Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors
Authors: by Yunfei Gu, Dengxue Yan, Vaibhav Verma, Pai Wang, Mircea R. Stan and Xuan Zhang
Link: https://www.mdpi.com/2079-9268/8/3/28

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