Search Results (1,919)

Improving charge transport in the aggregated state of nanocomposites is challenging due to the large number of defects present at grain boundaries. To enhance the charge transfer and photogenerated carrier extraction of MnO_x nanofibers, a MnO_x/GO (graphene oxide) nanocomposite was prepared. The effects of GO content and bias on the optoelectronic properties were studied. Representative light sources at 405, 650, 780, 808, 980, and 1064 nm were used to examine the photoelectric signals. The results indicate that the MnO_x/GO nanocomposites have photocurrent switching behaviours from the visible region to the NIR (near-infrared) when the amount of GO added is optimised. It was also found that even with zero bias and storage of the nanocomposite sample at room temperature for over 8 years, a good photoelectric signal could still be extracted. This demonstrates that the MnO_x/GO nanocomposites present a strong built-in electric field that drives the directional motion of photogenerated carriers, avoids the photogenerated carrier recombination, and reflect a good photophysical stability. The strength of the built-in electric field is strongly affected by the component ratios of the resulting nanocomposite. The formation of the built-in electric field results from interfacial charge transfer in the nanocomposite. Modulating the charge behaviour of nanocomposites can significantly improve the physicochemical properties of materials when excited by light with different wavelengths and can be used in multidisciplinary applications. Since the recombination of photogenerated electron–hole pairs is the key bottleneck in multidisciplinary fields, this study provides a simple, low-cost method of tailoring defects at grain boundaries in the aggregated state of nanocomposites. These results can be used as a reference for multidisciplinary fields with low energy consumption. Full article

This Review examines up-to-date advancements in the integration of biomolecules and solar energy technologies, with a particular focus on biohybrid photovoltaic systems. Biomolecules have recently garnered increasing interest as functional components in a wide range of solar cell architectures, since they offer a huge variety of structural, optical, and electronic properties, useful to fulfill multiple roles within photovoltaic devices. These roles span from acting as light-harvesting sensitizers and charge transport mediators to serving as micro- and nanoscale structural scaffolds, rheological modifiers, and interfacial stabilizers. In this Review, a comprehensive overview of the state of the art about the integration of biomolecules across the various generations of photovoltaics is provided. The functional roles of pigments, DNA, proteins, and polysaccharides are critically reported improvements and limits associated with the use of biological molecules in optoelectronics. The molecular mechanisms underlying the interaction between biomolecules and semiconductors are also discussed as essential for a functional integration of biomolecules in solar cells. Finally, this Review shows the current state of the art, and the most significant results achieved in the use of biomolecules in solar cells, with the main scope of outlining some guidelines for future further developments in the field of biohybrid photovoltaics. Full article

Optical materials are widely used in large optical systems such as lithography machines and astronomical telescopes. However, optical materials inevitably produce subsurface damage (SSD) during lapping and polishing processes, degrading the laser damage threshold and impacting the service life of the optical system. The large surface roughness of the lapped optical materials further increases the difficulty of the nondestructive detection of SSD. Quantum dots (QDs) show great development potential in the nondestructive detection of SSD in lapped materials. However, existing QD-based SSD detection methods ignore the polarization sensitivity of QDs to excitation light, which affects the detection accuracy of SSD. To address this problem, this paper explores the fluorescence polarization properties of QDs in the SSD of optical materials. First, the detection principle of SSD based on the fluorescence polarization of QDs is investigated. Subsequently, a fluorescence polarization detection system is developed to analyze the fluorescence polarization properties of QDs in SSD. Finally, the SSD is detected based on the studied polarization properties. The results show that the proposed method effectively improves the detection rate of SSD by 10.8% and thus provides guidance for evaluating the quality of optical material and optimizing optical material processing technologies. The research paradigm is equally applicable to biomedicine, energy, optoelectronics, and the environment, where QDs have a wide range of applications. Full article

Constructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field. Here, we investigate the physical properties of the heterojunctions formed by the contact of different atom planes of Janus MoSSe (JMoSSe) and graphene (Gr), and regulate the Schottky barrier of the Gr/JMoSSe heterojunction by the number of layers and the electric field. Due to the difference in atomic electronegativity and surface work function (WF), the Gr/JSMoSe heterojunction formed by the contact of S atoms with Gr exhibits an n-type Schottky barrier, whereas the Gr/JSeMoS heterojunction formed by the contact of the Se atoms with Gr reveals a p-type Schottky barrier. Increasing the number of layers of JMoSSe allows the Gr/JMoSSe heterojunction to achieve the transition from Schottky contact to Ohmic contact. Moreover, under the control of an external electric field, the Gr/JMoSSe heterojunction can realize the transition among n-type Schottky barrier, p-type Schottky barrier, and Ohmic contact. The physical mechanism of the layer number and electric field modulation effect is analyzed in detail by the change in the interface electron charge transfer. Our results will contribute to the design and application of nanoelectronics and optoelectronic devices based on Gr/JMoSSe heterojunctions in the future. Full article

Transition-metal and rare-earth element co-doped ZnO nanoparticles have attracted significant attention due to their potential applications in spintronics and optoelectronics. In this study, Zn_0.95Co_0.01EuxO (x = 0.01–0.05) nanoparticles were synthesized using the sol–gel technique. The estimated stress, strain, and crystallite sizes of the synthesized Co/Eu co-doped ZnO nanoparticles were calculated using the Williamson–Hall method, and their electron spin resonance (ESR) properties were investigated to examine the effect on their magnetic and structural properties. X-ray diffraction (XRD) analysis confirmed the presence of a single-phase structure. Surface morphology, elemental composition, crystal quality, defect types, density, and magnetic behavior were characterized using scanning electron microscope (SEM), electron-dispersive spectroscopy (EDS), and ESR techniques, respectively. The effect of Eu concentration on the linewidth (ΔBpp) and g-factor in the ESR spectra was studied. By correlating ESR results with the obtained structural properties, room-temperature ferromagnetic behavior was identified. Full article

Recently, the design and fabrication of novel electrode materials for electrochemical and electronic devices have received the widespread attention of the scientific community. In particular, electrochemical sensors and supercapacitors (SCs) involve the use of catalysts, which can enhance the electrochemical reactions at the surface of the electrode. Bismuth tungstate (Bi₂WO₆) is a cost-effective and efficient electrode material with decent optoelectronic properties and stability. The properties of Bi₂WO₆ can be improved by incorporating carbon-based materials, and the resulting composite may be a promising electrode material for electrochemical sensing and SCs. As per the available reports, Bi₂WO₆ has been combined with various nanostructured and conductive materials for electrochemical sensing and SC applications. This review discusses synthetic methods for the preparation of Bi₂WO₆. Progress in the construction of hybrid composites for electrochemical sensing and SC applications is reviewed. The Conclusion section discusses the role of electrode materials and their limitations with future perspectives for electrochemical sensing and SCs. It is believed that the present review may be useful for researchers working on Bi₂WO₆-based materials for electrochemical sensing and SC applications. Full article

Oblique angle deposition (OAD) holds significant potential for diverse applications, including energy harvesting devices, optoelectronic sensors, and electronic devices, owing to the creation of unique nanostructures. These nanostructures are characterized by their porosity and nanoscale columns, which can exist in numerous forms depending on deposition conditions. As a result, the engineering of nanostructures using OAD achieves the successful modulation of optical properties such as absorption, reflection, and transmission. This explains the current surge of attention toward photodetectors based on OAD technology. This review presents various photodetectors based on OAD technology and summarizes reported cases. It also explores current advancements, major applications, and future directions in photodetector development and nanostructure engineering. Ultimately, this review aims to provide a comprehensive overview of the research trends in photodetectors utilizing OAD technology and focus on their further development and application potential. Full article

In this study, three alternating donor–acceptor (D–A) type [12]cycloparaphenylene ([12]CPP) derivatives ([12]CPP 1a, 2a, and 3a) were designed through precise molecular engineering, and their multidimensional photophysical responses and chiroptical properties were systematically investigated. The effects of the alternating D–A architecture on electronic structure, excited-state dynamics, and optical behavior were elucidated through density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations. The results show that the alternating D–A design significantly reduced the HOMO–LUMO energy gap (e.g., 3.11 eV for [12]CPP 2a), enhanced charge transfer characteristics, and induced pronounced red-shifted absorption. The introduction of an imide-based acceptor ([12]CPP 2a) further strengthened the electron push-pull interaction, exhibiting superior performance in two-photon absorption, while the symmetrically multifunctionalized structure ([12]CPP 3a) predominantly exhibited localized excitation with the highest absorption intensity but lacked charge transfer features. Chiral analysis reveals that the alternating D–A architecture modulated the distribution of chiral signals, with [12]CPP 1a displaying a strong Cotton effect in the low-wavelength region. These findings not only provide a theoretical basis for the molecular design of functionalized CPP derivatives, but also lay a solid theoretical foundation for expanding their application potential in optoelectronic devices and chiral functional materials. Full article

This study investigates the influence of rotation on wave propagation in a semiconducting nanostructure thermoelastic solid subjected to a ramp-type heat source within a two-temperature model. The thermoelastic interactions are modeled using the two-temperature theory, which distinguishes between conductive and thermodynamic temperatures, providing a more accurate description of thermal and mechanical responses in semiconductor materials. The effects of rotation, ramp-type heating, and semiconductor properties on elastic wave propagation are analyzed theoretically. Governing equations are formulated and solved analytically, with numerical simulations illustrating the variations in thermal and elastic wave behavior. The key findings highlight the significant impact of rotation, nonlocal parameters $e_{0}a$, and time derivative fractional order (FO) $\alpha$ on physical quantities, offering insights into the thermoelastic performance of semiconductor nanostructures under dynamic thermal loads. A comparison is made with the previous results to show the impact of the external parameters on the propagation phenomenon. The numerical results show that increasing the rotation rate $\mathsf{\Omega }=5$ causes a phase lag of approximately 22% in thermal and elastic wave peaks. When the thermoelectric coupling parameter ${\mathsf{\epsilon }}_3$ is increased from $-0.8\times {10}^{-42}$ to $1.2\times {10}^{-42}$. The temperature amplitude rises by 17%, while the carrier density peak increases by over 25%. For nonlocal parameter values $\mathsf{\epsilon }=0.3\to 0.6$, high-frequency stress oscillations are damped by more than 35%. The results contribute to the understanding of wave propagation in advanced semiconductor materials, with potential applications in microelectronics, optoelectronics, and nanoscale thermal management. Full article

Lead sulfide colloidal quantum dots (PbS QDs) have demonstrated great potential in short-wave infrared (SWIR) photodetectors due to their tunable bandgap, low cost, and broad spectral response. While significant progress has been made in surface ligand modification and defect state passivation, studies focusing on the interface between QDs and electrodes remain limited, which hinders further improvement in device performance. In this work, we propose an interface engineering strategy based on 3-aminopropyltriethoxysilane (APTES) to enhance the interfacial contact between PbS QD films and ITO interdigitated electrodes, thereby significantly boosting the overall performance of SWIR photodetectors. Experimental results demonstrate that the optimal 0.5 h APTES treatment duration significantly enhances responsivity by achieving balanced interface passivation and charge carrier transport. Moreover, The APTES-modified device exhibits a controllable dark current and faster photo-response under 1310 nm illumination. This interface engineering approach provides an effective pathway for the development of high-performance PbS QD-based SWIR photodetectors, with promising applications in infrared imaging, spectroscopy, and optical communication. Full article

Silver nanowire (AgNW)-based transparent conductive films are essential for flexible electronics due to their superior optoelectronic properties and mechanical flexibility. This review examines the characteristics and fabrication methods of AgNW thin films in detail. Among various fabrication techniques, the AgNW thin film produced by silk-screen printing exhibits the highest quality factor of 568.47, achieving 95.3% visible light transmittance of 95.3% and 13.6 Ω/sq sheet resistance. Ensuring the stability of AgNW films requires the deposition of protective layers through physical or chemical approaches. This review also systematically evaluates the different methods for preparing these protective layers, including their respective advantages and limitations. Furthermore, the review proposes strategies to enhance the conductivity, transparency, and flexibility of AgNW films. Finally, it discusses potential future applications and challenges, offering valuable insights for the development of next-generation flexible transparent electrodes. Full article

Hyperbolic plasmons are a highly desired property in optoelectronics and biomolecular sensing. The necessary condition to realize hyperbolic plasmons is a significant anisotropy of the principal components of the dielectric function, such that at a certain frequency range, one component is negative and the other is positive, i.e., one component is metallic, and the other one is dielectric. Here, we study the effect of anisotropy in ${\mathrm{ReS}}_2$, and our theory shows that ${\mathrm{ReS}}_2$ can host hyperbolic plasmons in the ultraviolet frequency range. The operating frequency range of the hyperbolic plasmons can be tuned with the number of ${\mathrm{ReS}}_2$ layers. However, we note that the significantly large imaginary part of the macroscopic dielectric response in all layered variants of ReS₂ can result in substantial losses for the hyperbolic plasmons, as in the case with other known hyperbolic materials, with the exception of MoOCl₂. We also note that ReS₂ hosts ultraviolet hyperbolic plasmons while ZrSiSe, WTe₂, and CuS nanocrystals host infrared plasmons, providing a novel platform for optoelectronics in the ultraviolet range. Full article

A new π-conjugated acceptor–donor–acceptor small molecule, designed for applications in organic solar cells, containing a terthiophene core and indandione- and benzonitrile-based electron-withdrawing units, was synthesized via a multi-step process involving Suzuki–Miyaura cross-coupling and Knoevenagel condensation reactions. The structure was confirmed by NMR spectroscopy, HRMS, and its optoelectronic properties were evaluated by UV–vis spectroscopy and cyclic voltammetry. Full article

Aluminum nitride (AlN) thin films were deposited on SiO₂ substrates by RF-magnetron sputtering at varying powers (110–140 W) and subsequently subjected to thermal annealing at 450 °C under nitrogen atmosphere. A comprehensive multi-technique investigation—including X-ray reflectometry (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical profilometry, spectroscopic ellipsometry (SE), and electrical measurements—was performed to explore the physical structure, morphology, and optical and electrical properties of the films. The analysis of the film structure by XRR revealed that increasing sputtering power resulted in thicker, denser AlN layers, while thermal treatment promoted densification by reducing density gradients but also induced surface roughening and the formation of island-like morphologies. Optical studies confirmed excellent transparency (>80% transmittance in the near-infrared region) and demonstrated the tunability of the refractive index with sputtering power, critical for optoelectronic applications. The electrical characterization of Au/AlN/Al sandwich structures revealed a transition from Ohmic to trap-controlled space charge limited current (SCLC) behavior under forward bias—a transport mechanism frequently present in a material with very low mobility, such as AlN—while Schottky conduction dominated under reverse bias. The systematic correlation between deposition parameters, thermal treatment, and the resulting physical properties offers valuable pathways to engineer AlN thin films for next-generation optoelectronic and high-frequency device applications. Full article

Group IV element-based topological semimetals (TSMs) are pivotal for next-generation quantum devices due to their ultra-high carrier mobility and low-energy consumption. However, germanium (Ge)-based TSMs remain underexplored despite their compatibility with existing semiconductor technologies. Here, we propose a novel I229-Ge₄₈ allotrope constructed via bottom-up cluster assembly that exhibits a unique porous spherical Fermi surface and strain-tunable topological robustness. First-principles calculations reveal that I229-Ge₄₈ is a topological nodal line semimetal with exceptional mechanical anisotropy (Young’s modulus ratio: 2.27) and ductility (B/G = 2.21, ν = 0.30). Remarkably, the topological property persists under spin-orbit coupling (SOC) and tensile strain, while compressive strain induces a semiconductor transition (bandgap: 0.29 eV). Furthermore, I229-Ge₄₈ demonstrates strong visible-light absorption (10⁵ cm⁻¹) and a strong strain-modulated infrared response, surpassing conventional Ge allotropes. These findings establish I229-Ge₄₈ as a multifunctional platform for strain-engineered nanoelectronics and optoelectronic devices. Full article