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Target Voltage Hysteresis Behavior and Control Point in the Preparation of Aluminum Oxide Thin Films by Medium Frequency Reactive Magnetron Sputtering

Institute of Materials, China Academy of Engineering Physics, Mianyang 621700, China
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Authors to whom correspondence should be addressed.
These authors contribute equally to this work.
Coatings 2018, 8(4), 146; https://doi.org/10.3390/coatings8040146
Received: 16 March 2018 / Revised: 11 April 2018 / Accepted: 16 April 2018 / Published: 18 April 2018
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Abstract

Aluminum oxide thin films were prepared by medium frequency reactive magnetron sputtering. The target voltage hysteresis behavior under different argon partial pressure and target power conditions were studied. The results indicate that the target voltage hysteresis loop of aluminum oxide thin film preparation has typical behavior of that for reactive sputtering deposition of compound films. The target voltage feedback control approach was applied to circumvent the hysteresis problem. The microstructure and chemical composition of the aluminum oxide thin films prepared at different target voltage control points were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. The results indicated that the prepared aluminum oxide thin films, which are compact and mostly amorphous, can be obtained with target voltage control point in the range of 25~35%. View Full-Text
Keywords: aluminum oxide; thin film; medium frequency; magnetron sputtering; target voltage; hysteresis loop aluminum oxide; thin film; medium frequency; magnetron sputtering; target voltage; hysteresis loop
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Wang, Q.; Fang, L.; Liu, Q.; Chen, L.; Wang, Q.; Meng, X.; Xiao, H. Target Voltage Hysteresis Behavior and Control Point in the Preparation of Aluminum Oxide Thin Films by Medium Frequency Reactive Magnetron Sputtering. Coatings 2018, 8, 146.

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