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Thermal Growth of Graphene: A Review

1, 1,2 and 1,2,*
College of Mechanical and Transportation Engineering, China University of Petroleum, Beijing 102249, China
Beijing Key Laboratory of Fluid Filtration and Separation, China University of Petroleum, Beijing 102249, China
Author to whom correspondence should be addressed.
Coatings 2018, 8(1), 40;
Received: 29 November 2017 / Revised: 25 December 2017 / Accepted: 30 December 2017 / Published: 19 January 2018
PDF [5701 KB, uploaded 19 January 2018]


A common belief proposed by Peierls and Landau that two-dimensional material cannot exist freely in a three-dimensional world has been proved false when graphene was first synthesized in 2004. Graphene, which is the base structure of other carbon materials, has drawn much attention of scholars and researchers due to its extraordinary electrical, mechanical and thermal properties. Moreover, methods for its synthesis have developed greatly in recent years. This review focuses on the mechanism of the thermal growth method and the different synthesis methods, where epitaxial growth, chemical vapor deposition, plasma-enhanced chemical vapor deposition and combustion are discussed in detail based on this mechanism. Meanwhile, to improve the quality and control the number of graphene layers, the latest research progress in optimizing growth parameters and developmental technologies has been summarized. The strategies for synthesizing high-quality and large-scale graphene are proposed and an outlook on the future synthesis direction is also provided. View Full-Text
Keywords: graphene; epitaxial growth; chemical vapor deposition; plasma; combustion graphene; epitaxial growth; chemical vapor deposition; plasma; combustion

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Tan, H.; Wang, D.; Guo, Y. Thermal Growth of Graphene: A Review. Coatings 2018, 8, 40.

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