Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers

Yang, Hao; Lian, Songyou; Chapon, Patrick; Song, Yibing; Wang, Jiangyong; Xu, Congkang

doi:10.3390/coatings11060612

Open AccessArticle

Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B₄C/Si Nano-Multilayers

by

Hao Yang

^1,2,†

,

Songyou Lian

^2,3,†,

Patrick Chapon

⁴,

Yibing Song

¹,

Jiangyong Wang

^2,* and

Congkang Xu

^2,*

¹

Department of Chemistry, Shantou University, 243 Daxue Road, Shantou 515063, China

²

Department of Physics, Shantou University, 243 Daxue Road, Shantou 515063, China

³

Department of Physics, University of the Free State, Bloemfontein 9300, South Africa

⁴

HORIBA France, Bd Thomas Gobert, 91120 Palaiseau, France

^*

Authors to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Coatings 2021, 11(6), 612; https://doi.org/10.3390/coatings11060612

Submission received: 26 April 2021 / Revised: 15 May 2021 / Accepted: 18 May 2021 / Published: 21 May 2021

(This article belongs to the Special Issue Thin and Thick Films: Deposition, Characterization and Applications)

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Abstract

Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B₄C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.

Keywords: GDOES depth profiling; preferential sputtering; MRI model; nano-multilayers

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MDPI and ACS Style

Yang, H.; Lian, S.; Chapon, P.; Song, Y.; Wang, J.; Xu, C. Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B₄C/Si Nano-Multilayers. Coatings 2021, 11, 612. https://doi.org/10.3390/coatings11060612

AMA Style

Yang H, Lian S, Chapon P, Song Y, Wang J, Xu C. Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B₄C/Si Nano-Multilayers. Coatings. 2021; 11(6):612. https://doi.org/10.3390/coatings11060612

Chicago/Turabian Style

Yang, Hao, Songyou Lian, Patrick Chapon, Yibing Song, Jiangyong Wang, and Congkang Xu. 2021. "Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B₄C/Si Nano-Multilayers" Coatings 11, no. 6: 612. https://doi.org/10.3390/coatings11060612

APA Style

Yang, H., Lian, S., Chapon, P., Song, Y., Wang, J., & Xu, C. (2021). Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B₄C/Si Nano-Multilayers. Coatings, 11(6), 612. https://doi.org/10.3390/coatings11060612

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Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B₄C/Si Nano-Multilayers

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