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Journal: Coatings, 2021
Volume: 11
Number: 197
Article:
Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method
Authors:
by
Jinsu Jung, Dongjoo Bae, Sungho Kim and Hee-Dong Kim
Link:
https://www.mdpi.com/2079-6412/11/2/197
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