Article Versions Notes

Park W, Pak Y, Jang HY, Nam JH, Kim TH, Oh S, Choi SM, Kim Y, Cho B. Improvement of the Bias Stress Stability in 2D MoS₂ and WS₂ Transistors with a TiO₂ Interfacial Layer. Nanomaterials. 2019; 9(8):1155. https://doi.org/10.3390/nano9081155

Park, Woojin, Yusin Pak, Hye Yeon Jang, Jae Hyeon Nam, Tae Hyeon Kim, Seyoung Oh, Sung Mook Choi, Yonghun Kim, and Byungjin Cho. 2019. "Improvement of the Bias Stress Stability in 2D MoS₂ and WS₂ Transistors with a TiO₂ Interfacial Layer" Nanomaterials 9, no. 8: 1155. https://doi.org/10.3390/nano9081155

Park, W., Pak, Y., Jang, H. Y., Nam, J. H., Kim, T. H., Oh, S., Choi, S. M., Kim, Y., & Cho, B. (2019). Improvement of the Bias Stress Stability in 2D MoS₂ and WS₂ Transistors with a TiO₂ Interfacial Layer. Nanomaterials, 9(8), 1155. https://doi.org/10.3390/nano9081155